FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

ISG0616N10NM5HSCATMA1 ISG0616N10NM5HSCATMA1 Infineon Technologies	3,000 In Stock	1 : ¥38.01000 Cut Tape (CT) 3,000 : ¥18.50507 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	100V	19A (Ta), 139A (Tc)	4mOhm @ 50A, 10V	3.8V @ 85µA	78nC @ 10V	4800pF @ 50V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerWDFN	PG-WHITFN-10-1
IAUCN10S5L280DATMA1 MOSFET_(75V 120V( Infineon Technologies	0 In Stock Check Lead Time	1 : ¥13.18000 Cut Tape (CT) 5,000 : ¥5.80135 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel	-	100V	23A (Tj)	28mOhm @ 10A, 10V	2.2V @ 10µA	10nC @ 10V	690pF @ 10V	38W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerTDFN	PG-TDSON-8-61
IAUCN10S5L094DATMA1 MOSFET_(75V 120V( Infineon Technologies	0 In Stock Check Lead Time	1 : ¥18.96000 Cut Tape (CT) 5,000 : ¥8.35270 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel	-	100V	66A (Tj)	9.4mOhm @ 30A, 10V	2.2V @ 35µA	30nC @ 10V	2180pF @ 50V	96W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-PowerTDFN	PG-TDSON-8-60
ISG0614N06NM5HATMA1 ISG0614N06NM5HATMA1 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥32.47000 Cut Tape (CT) 3,000 : ¥15.82378 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	60V	31A (Ta), 233A (Tc)	1.6mOhm @ 50A, 10V	3.3V @ 86µA	102nC @ 10V	6400pF @ 30V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerVDFN	PG-VITFN-10-1
ISG0614N06NM5HSCATMA1 ISG0614N06NM5HSCATMA1 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥35.79000 Cut Tape (CT) 3,000 : ¥17.42080 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	60V	31A (Ta), 233A (Tc)	1.6mOhm @ 50A, 10V	3.3V @ 86µA	102nC @ 10V	6400pF @ 30V	3W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerWDFN	PG-WHITFN-10-1

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.