SIHD2N80E-GE3

DigiKey Part Number
SIHD2N80E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHD2N80E-GE3
Description
MOSFET N-CH 800V 2.8A DPAK
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥11.25000¥11.25
10¥9.17900¥91.79
100¥7.13930¥713.93
500¥6.05150¥3,025.75
1,000¥4.92954¥4,929.54
3,000¥4.64060¥13,921.80
6,000¥4.41962¥26,517.72
12,000¥4.21564¥50,587.68
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.