SIHD2N80E-GE3 | |
---|---|
DigiKey Part Number | SIHD2N80E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHD2N80E-GE3 |
Description | MOSFET N-CH 800V 2.8A DPAK |
Manufacturer Standard Lead Time | 15 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA |
Datasheet | Datasheet |
Type | Description | Select All |
---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.75Ohm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 62.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252AA | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
---|---|---|
1 | ¥11.25000 | ¥11.25 |
10 | ¥9.17900 | ¥91.79 |
100 | ¥7.13930 | ¥713.93 |
500 | ¥6.05150 | ¥3,025.75 |
1,000 | ¥4.92954 | ¥4,929.54 |
3,000 | ¥4.64060 | ¥13,921.80 |
6,000 | ¥4.41962 | ¥26,517.72 |
12,000 | ¥4.21564 | ¥50,587.68 |