SIHB21N80AE-GE3 | ||
---|---|---|
DigiKey Part Number | 742-SIHB21N80AE-GE3-ND | |
Manufacturer | ||
Manufacturer Product Number | SIHB21N80AE-GE3 | |
Description | MOSFET N-CH 800V 17.4A D2PAK | |
Manufacturer Standard Lead Time | 28 Weeks | |
Customer Reference | ||
Detailed Description | N-Channel 800 V 17.4A (Tc) 32W (Tc) Surface Mount TO-263 (D2PAK) | |
Datasheet | Datasheet | |
EDA/CAD Models | SIHB21N80AE-GE3 Models |
Type | Description | Select All |
---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 235mOhm @ 11A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1388 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 32W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263 (D2PAK) | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
---|---|---|
1 | ¥22.90000 | ¥22.90 |
10 | ¥19.24300 | ¥192.43 |
100 | ¥15.56820 | ¥1,556.82 |
500 | ¥13.83800 | ¥6,919.00 |
1,000 | ¥11.84888 | ¥11,848.88 |
2,000 | ¥11.15696 | ¥22,313.92 |
5,000 | ¥10.70397 | ¥53,519.85 |