BSM120D12P2C005

DigiKey Part Number
BSM120D12P2C005-ND
Manufacturer
Manufacturer Product Number
BSM120D12P2C005
Description
MOSFET 2N-CH 1200V 120A MODULE
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 120A (Tc) 780W Module
Datasheet
 Datasheet
EDA/CAD Models
BSM120D12P2C005 Models
Product Attributes
Type
Description
Select All
Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
780W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥3,244.50000¥3,244.50
12¥3,122.52750¥37,470.33
Manufacturers Standard Package