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Silicon Carbide (SiC) 4th Generation MOSFET: TO-247-4L Image of ROHM's Silicon Carbide (SiC) 4th Generation MOSFET Switching Loss Diagrams

ROHM’s SiC MOSFET comes in two varieties of leaded TO-247 packages. The latest TO-247-4L package has four leads. The extra lead is dedicated for connecting the gate driver directly to the source of the internal SiC MOSFET. This allows the driver to bypass the parasitic inductance normally encountered at the power source pin. The result is the ability to drive 4-lead SiC MOSFETs at even higher switching speeds, which further reduces switching losses.

PTM Published on: 2023-07-06