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Silicon carbide (SiC) is emerging as an ideal semiconductor for power devices used in EV charging stations. A wide bandgap (WBG) semiconductor, SiC provides 10x the dielectric breakdown compared to silicon devices, allowing higher voltages in a smaller footprint. In addition, higher temperature stability allows SiC devices to reliably operate at up to +200°C versus just +150°C with traditional silicon devices. Additional to that, SiC enables operation at much higher frequencies due to significantly lower switching losses, making it possible to reduce the physical sizes of electromagnetic components such as inductors.
PTM Published on: 2023-07-06
