Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V
Rds On (Max) @ Id, Vgs
1.03mOhm @ 60A, 10V960mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
2V @ 90µA3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V128 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
6878 pF @ 25 V7806 pF @ 25 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-34
IAUC120N04S6N010ATMA1
MOSFET N-CH 40V 150A TDSON-8-34
Infineon Technologies
14,899
In Stock
1 : ¥18.14000
Cut Tape (CT)
5,000 : ¥7.88444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
7V, 10V
1.03mOhm @ 60A, 10V
3V @ 90µA
108 nC @ 10 V
±20V
6878 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
PG-TDSON-8-34
IAUC120N04S6L009ATMA1
MOSFET N-CH 40V 150A TDSON-8-34
Infineon Technologies
22,720
In Stock
1 : ¥18.14000
Cut Tape (CT)
5,000 : ¥7.88444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
960mOhm @ 60A, 10V
2V @ 90µA
128 nC @ 10 V
±16V
7806 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.