Single Bipolar Transistors

Results: 4
Packaging
BulkCut Tape (CT)Tape & Box (TB)Tape & Reel (TR)
Transistor Type
NPNPNP
Voltage - Collector Emitter Breakdown (Max)
30 V45 V65 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V420 @ 2mA, 5V
Frequency - Transition
150MHz300MHz
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
BC546BTF
TRANS NPN 65V 0.1A TO92-3
onsemi
18,309
In Stock
1 : ¥2.71000
Cut Tape (CT)
2,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
NPN
100 mA
65 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500 mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
BC559CTA
TRANS PNP 30V 0.1A TO92-3
onsemi
49,069
In Stock
1 : ¥2.79000
Cut Tape (CT)
2,000 : ¥0.46908
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500 mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
BC559BTA
TRANS PNP 30V 0.1A TO92-3
onsemi
6,426
In Stock
64,000
Factory
1 : ¥2.79000
Cut Tape (CT)
2,000 : ¥0.46358
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500 mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
BC550CBU
TRANS NPN 45V 0.1A TO92-3
onsemi
8,601
In Stock
60,000
Factory
1 : ¥3.12000
Bulk
-
Bulk
Active
NPN
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500 mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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of 4

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.