Single Bipolar Transistors

Results: 4
Manufacturer
Microchip TechnologyonsemiSTMicroelectronics
Packaging
BulkTrayTube
Current - Collector (Ic) (Max)
10 A12 A20 A30 A
Voltage - Collector Emitter Breakdown (Max)
60 V80 V100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A3V @ 200mA, 20A3V @ 40mA, 10A4V @ 300mA, 30A
Current - Collector Cutoff (Max)
1mA2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 10A, 3V1000 @ 20A, 5V1000 @ 5A, 4V1000 @ 6A, 3V
Power - Max
125 W150 W160 W200 W
Frequency - Transition
4MHz-
Operating Temperature
-65°C ~ 200°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)150°C (TJ)
Package / Case
TO-204AA, TO-3TO-247-3
Supplier Device Package
TO-204 (TO-3)TO-247TO-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-247-3 HiP
TIP142
TRANS NPN DARL 100V 10A TO247
STMicroelectronics
5,565
In Stock
1 : ¥18.88000
Tube
-
Tube
Active
NPN - Darlington
10 A
100 V
3V @ 40mA, 10A
2mA
1000 @ 5A, 4V
125 W
-
150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247
TO-3 Pkg
2N6284G
TRANS NPN DARL 100V 20A TO204
onsemi
617
In Stock
1 : ¥48.85000
Tray
-
Tray
Active
NPN - Darlington
20 A
100 V
3V @ 200mA, 20A
1mA
750 @ 10A, 3V
160 W
-
-65°C ~ 200°C (TJ)
-
-
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11012G
TRANS NPN DARL 60V 30A TO204
onsemi
0
In Stock
1,341
Marketplace
Check Lead Time
1 : ¥69.37000
Tray
-
Bulk
Tray
Active
NPN - Darlington
30 A
60 V
4V @ 300mA, 30A
1mA
1000 @ 20A, 5V
200 W
4MHz
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-204AA, TO-3
JANTX2N6058
TRANS NPN DARL 80V 12A TO3
Microchip Technology
647
In Stock
1 : ¥568.29000
Bulk
-
Bulk
Active
NPN - Darlington
12 A
80 V
3V @ 120mA, 12A
1mA
1000 @ 6A, 3V
150 W
-
-55°C ~ 175°C (TJ)
Military
MIL-PRF-19500/502
Through Hole
TO-204AA, TO-3
TO-3
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.