Single FETs, MOSFETs

Results: 4
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V750 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)39A (Tc)40A (Tc)70A (Tc)
Rds On (Max) @ Id, Vgs
39mOhm @ 27A, 18V59mOhm @ 17A, 18V69mOhm @ 20A, 18V78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
4.8V @ 8.89mA5V @ 1.6mA5.6V @ 13.3mA5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V58 nC @ 18 V63 nC @ 18 V104 nC @ 18 V
Vgs (Max)
+21V, -4V+22V, -4V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
852 pF @ 500 V1362 pF @ 400 V1460 pF @ 500 V1526 pF @ 500 V
Power Dissipation (Max)
115W132W (Tc)165W (Tc)262W (Tc)
Operating Temperature
175°C175°C (TJ)
Supplier Device Package
TO-247-4LTO-247-4L(X)TO-247N
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247N
SCT3030ALGC11
SICFET N-CH 650V 70A TO247N
Rohm Semiconductor
9,088
In Stock
1 : ¥245.80000
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Active
N-Channel
SiCFET (Silicon Carbide)
650 V
70A (Tc)
18V
39mOhm @ 27A, 18V
5.6V @ 13.3mA
104 nC @ 18 V
+22V, -4V
1526 pF @ 500 V
-
262W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT4026DRHRC15
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
4,859
In Stock
1 : ¥116.09000
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N-Channel
SiCFET (Silicon Carbide)
750 V
34A (Tc)
18V
59mOhm @ 17A, 18V
4.8V @ 8.89mA
63 nC @ 18 V
+21V, -4V
1460 pF @ 500 V
-
115W
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
G3 650V SIC-MOSFET TO-247-4L 48
TW048Z65C,S1F
G3 650V SIC-MOSFET TO-247-4L 48
Toshiba Semiconductor and Storage
245
In Stock
1 : ¥114.86000
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N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
40A (Tc)
18V
69mOhm @ 20A, 18V
5V @ 1.6mA
41 nC @ 18 V
+25V, -10V
1362 pF @ 400 V
-
132W (Tc)
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TO-247N
SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
0
In Stock
Check Lead Time
1 : ¥111.98000
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N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.