RF FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

ART450FEU RF MOSFET SOT1121 Ampleon USA Inc.	137 In Stock	1 : ¥1,186.58000 Tray	-	Tray	Active	LDMOS (Dual)	2 N-Channel	1MHz ~ 650MHz	27dB	65 V	1.4µA	-	25 mA	450W	200 V	-	-	Chassis Mount	SOT-1121A	CDFM4
ART700FHU RF MOSFET LDMOS 55V SOT1214A Ampleon USA Inc.	99 In Stock	1 : ¥1,373.10000 Tray	-	Tray	Active	LDMOS	Dual, Common Source	1MHz ~ 450MHz	28.6dB	55 V	1.4µA	-	25 mA	700W	177 V	-	-	Chassis Mount	SOT-1214A	SOT1214A
ART1K6FHU RF MOSFET LDMOS 55V SOT539A Ampleon USA Inc.	459 In Stock	1 : ¥1,708.94000 Tray	ART	Tray	Active	LDMOS	Dual, Common Source	1MHz ~ 425MHz	28dB	55 V	-	-	50 mA	1600W	177 V	-	-	Chassis Mount	SOT-539A	SOT539A
BLP15M9S30GZ RF MOSFET LDMOS SOT1483-1 Ampleon USA Inc.	350 In Stock	1 : ¥189.14000 Cut Tape (CT) 500 : ¥135.24670 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	N-Channel	1.5GHz	19.3dB	-	-	-	-	30W	65 V	-	-	Surface Mount	SOT-1483-1	SOT1483-1
ART1K6FHGJ RF MOSFET LDMOS 65V SOT539AN Ampleon USA Inc.	74 In Stock	1 : ¥1,845.79000 Cut Tape (CT) 100 : ¥1,676.80520 Tape & Reel (TR)	ART	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	Dual, Common Source	1MHz ~ 425MHz	28dB	65 V	-	-	600 mA	1600W	177 V	-	-	Chassis Mount	SOT-539AN	SOT539AN
ART700FHSU RF MOSFET LDMOS 55V LDMOST Ampleon USA Inc.	41 In Stock	1 : ¥1,373.10000 Tray	-	Tray	Active	LDMOS	Dual, Common Source	1MHz ~ 450MHz	28.6dB	55 V	1.4µA	-	1.2 A	700W	177 V	-	-	Surface Mount	SOT-1214B	LDMOST
BLP15M9S30GXY RF MOSFET LDMOS 32V TO270 Ampleon USA Inc.	0 In Stock Check Lead Time	100 : ¥149.45770 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	LDMOS	N-Channel	2GHz	19.3dB	32 V	1.4µA	-	200 mA	30W	65 V	-	-	Surface Mount	TO-270BA	TO-270-2G-1

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RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.