Single FETs, MOSFETs

Results: 3
Series
-SuperMESH5™
Drain to Source Voltage (Vdss)
650 V800 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)20A (Tc)55A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 28A, 10V150mOhm @ 10A, 10V450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.2V @ 250µA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V32 nC @ 10 V80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 100 V1239 pF @ 400 V4610 pF @ 400 V
Power Dissipation (Max)
140W (Tc)190W (Tc)245W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
STP13N80K5
MOSFET N-CH 800V 12A TO220
STMicroelectronics
1,292
In Stock
1 : ¥29.06000
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N-Channel
MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
450mOhm @ 6A, 10V
5V @ 100µA
29 nC @ 10 V
±30V
870 pF @ 100 V
-
190W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
N-CHANNEL 650 V, 128 MOHM TYP.,
STP65N150M9
N-CHANNEL 650 V, 128 MOHM TYP.,
STMicroelectronics
434
In Stock
1 : ¥31.85000
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N-Channel
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
150mOhm @ 10A, 10V
4.2V @ 250µA
32 nC @ 10 V
±30V
1239 pF @ 400 V
-
140W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP65N045M9
N-CHANNEL 650 V, 39 MOHM TYP., 5
STMicroelectronics
0
In Stock
Check Lead Time
1,000 : ¥48.82583
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N-Channel
MOSFET (Metal Oxide)
650 V
55A (Tc)
10V
45mOhm @ 28A, 10V
4.2V @ 250µA
80 nC @ 10 V
±30V
4610 pF @ 400 V
-
245W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.