TO-263-7 (Straight Leads) Single FETs, MOSFETs

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

C2M1000170J SICFET N-CH 1700V 5.3A D2PAK Wolfspeed, Inc.	473 In Stock	1 : ¥87.59000 Bulk	C2M™	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.3A (Tc)	20V	1.4Ohm @ 2A, 20V	4V @ 500µA	13 nC @ 20 V	+25V, -10V	200 pF @ 1000 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7 (Straight Leads)
IRF1405ZL-7PPBF MOSFET N-CH 55V 120A TO263CA-7 Infineon Technologies	0 In Stock	200 : ¥22.16320 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	120A (Tc)	10V	4.9mOhm @ 88A, 10V	4V @ 150µA	230 nC @ 10 V	±20V	5360 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-263CA-7	TO-263-7 (Straight Leads)

Showing

of 2

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.