PowerSO-10 Exposed Bottom Pad Single FETs, MOSFETs

Results: 9
Series
STripFET™STripFET™ IISTripFET™ III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
20 V24 V30 V40 V55 V75 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)200A (Tc)240A (Tc)270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V10V, 5V
Rds On (Max) @ Id, Vgs
1mOhm @ 80A, 10V1.5mOhm @ 80A, 10V2.2mOhm @ 75A, 10V2.5mOhm @ 75A, 10V2.5mOhm @ 80A, 10V2.6mOhm @ 120A, 10V2.7mOhm @ 80A, 10V2.8mOhm @ 80A, 10V3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V109 nC @ 10 V140 nC @ 10 V150 nC @ 10 V160 nC @ 10 V175 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 25 V4800 pF @ 15 V5350 pF @ 25 V5500 pF @ 15 V6800 pF @ 25 V7055 pF @ 15 V7500 pF @ 25 V
Power Dissipation (Max)
210W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerSO-10
STV270N4F3
MOSFET N-CH 40V 270A 10POWERSO
STMicroelectronics
1,140
In Stock
1 : ¥45.32000
Cut Tape (CT)
600 : ¥27.36175
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
1.5mOhm @ 80A, 10V
4V @ 250µA
150 nC @ 10 V
±20V
7500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV160NF03LT4
MOSFET N-CH 30V 160A 10POWERSO
STMicroelectronics
87
In Stock
600 : ¥31.09290
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
160A (Tc)
5V, 10V
2.8mOhm @ 80A, 10V
1V @ 250µA
140 nC @ 10 V
±15V
4700 pF @ 25 V
-
210W (Tc)
175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV300NH02L
MOSFET N-CH 24V 200A 10POWERSO
STMicroelectronics
0
In Stock
600 : ¥26.53262
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
24 V
200A (Tc)
10V, 5V
1mOhm @ 80A, 10V
2V @ 250µA
109 nC @ 10 V
±20V
7055 pF @ 15 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV160NF02LAT4
MOSFET N-CH 20V 160A 10POWERSO
STMicroelectronics
0
In Stock
600 : ¥29.18587
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
160A (Tc)
5V, 10V
2.7mOhm @ 80A, 10V
1V @ 250µA
175 nC @ 10 V
±15V
5500 pF @ 15 V
-
210W (Tc)
175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV160NF03LAT4
MOSFET N-CH 30V 160A 10POWERSO
STMicroelectronics
0
In Stock
600 : ¥29.18587
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
160A (Tc)
5V, 10V
3mOhm @ 80A, 10V
1V @ 250µA
160 nC @ 10 V
±15V
5350 pF @ 25 V
-
210W (Tc)
175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV160NF02LT4
MOSFET N-CH 20V 160A 10POWERSO
STMicroelectronics
0
In Stock
600 : ¥31.83913
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
160A (Tc)
5V, 10V
2.5mOhm @ 80A, 10V
1V @ 250µA
160 nC @ 10 V
±15V
4800 pF @ 15 V
-
210W (Tc)
175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV200N55F3
MOSFET N-CH 55V 200A 10POWERSO
STMicroelectronics
0
In Stock
600 : ¥31.83913
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
200A (Tc)
10V
2.5mOhm @ 75A, 10V
4V @ 250µA
100 nC @ 10 V
±20V
6800 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV240N75F3
MOSFET N-CH 75V 240A 10POWERSO
STMicroelectronics
0
In Stock
1 : ¥44.99000
Cut Tape (CT)
600 : ¥27.16938
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
240A (Tc)
10V
2.6mOhm @ 120A, 10V
4V @ 250µA
100 nC @ 10 V
±20V
6800 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
PowerSO-10
STV250N55F3
MOSFET N-CH 55V 200A 10POWERSO
STMicroelectronics
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
200A (Tc)
10V
2.2mOhm @ 75A, 10V
4V @ 250µA
100 nC @ 10 V
±20V
6800 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
Showing
of 9

PowerSO-10 Exposed Bottom Pad Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.