8.3A (Ta) Single FETs, MOSFETs

Results: 35
Manufacturer
Diodes IncorporatedInfineon TechnologiesPanjit International Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
-FETKY™HEXFET®TrenchFET®U-MOSIV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V30 V60 V100 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 4.2A, 10V16mOhm @ 12.6A, 4.5V16mOhm @ 20A, 10V17mOhm @ 8.3A, 10V17.5mOhm @ 8.3A, 4.5V18mOhm @ 8.3A, 10V20mOhm @ 11A, 4.5V25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA1V @ 300µA1.1V @ 10µA2.5V @ 1mA2.5V @ 250µA3V @ 250µA3.5V @ 250µA4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V13.5 nC @ 4.5 V14 nC @ 4.5 V14 nC @ 5 V17 nC @ 5 V18.9 nC @ 4.5 V26 nC @ 10 V33.3 nC @ 10 V39 nC @ 4.5 V39 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 25 V1270 pF @ 10 V1574 pF @ 25 V1640 pF @ 25 V1871 pF @ 50 V1900 pF @ 10 V
FET Feature
-Schottky Diode (Isolated)
Power Dissipation (Max)
840mW (Ta)1.2W (Ta)1.5W (Ta)1.56W (Ta)2W (Ta)2.5W (Ta)2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-TSOP8-SO8-SOPPowerPAK® 1212-8PS-8 (2.9x2.4)
Package / Case
8-SMD, Flat Leads8-SOIC (0.154", 3.90mm Width)PowerPAK® 1212-8SOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-6
IRLTS6342TRPBF
MOSFET N-CH 30V 8.3A 6TSOP
Infineon Technologies
9,688
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20715
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
2.5V, 4.5V
17.5mOhm @ 8.3A, 4.5V
1.1V @ 10µA
11 nC @ 4.5 V
±12V
1010 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
IRF7853TRPBF
MOSFET N-CH 100V 8.3A 8SO
Infineon Technologies
11,091
In Stock
1 : ¥11.49000
Cut Tape (CT)
4,000 : ¥4.75153
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.3A (Ta)
10V
18mOhm @ 8.3A, 10V
4.9V @ 100µA
39 nC @ 10 V
±20V
1640 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8 SO
DMT10H015LSS-13
MOSFET N-CH 100V 8.3A 8SO
Diodes Incorporated
4,210
In Stock
25,000
Factory
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.66042
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8.3A (Ta)
4.5V, 10V
16mOhm @ 20A, 10V
3.5V @ 250µA
33.3 nC @ 10 V
±20V
1871 pF @ 50 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8 SO
ZXMN2A02N8TA
MOSFET N-CH 20V 8.3A 8SO
Diodes Incorporated
300
In Stock
1 : ¥12.15000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
8.3A (Ta)
2.5V, 4.5V
20mOhm @ 11A, 4.5V
700mV @ 250µA (Min)
18.9 nC @ 4.5 V
±12V
1900 pF @ 10 V
-
1.56W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807ATR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
4,000 : ¥3.62193
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807TR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
4,000 : ¥4.41423
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
-
2.5W (Ta)
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8-SOP
PJL9436A1_R2_00001
60V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
0
In Stock
Check Lead Time
1 : ¥4.93000
Cut Tape (CT)
2,500 : ¥1.65114
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
8.3A (Ta)
4.5V, 10V
17mOhm @ 8.3A, 10V
2.5V @ 250µA
13.5 nC @ 4.5 V
±20V
1574 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
IRF7807D2TR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
4,000 : ¥6.61700
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Tc)
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
95 : ¥6.79084
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VTRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
3V @ 250µA
14 nC @ 5 V
±20V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V, 10V
8.5mOhm @ 4.2A, 10V
2.5V @ 1mA
26 nC @ 10 V
±20V
1270 pF @ 10 V
-
840mW (Ta)
150°C (TJ)
Surface Mount
PS-8 (2.9x2.4)
8-SMD, Flat Leads
IRF7807TRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D1TRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D2
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
665 : ¥8.70161
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807A
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
95 : ¥9.02221
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VD1TRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
3V @ 250µA
14 nC @ 4.5 V
±20V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D2TRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D1TR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
4,000 : ¥9.70494
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VD2TRPBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
14 nC @ 4.5 V
±20V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VD2
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
95 : ¥14.92558
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
14 nC @ 4.5 V
±20V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VD1TR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
4,000 : ¥16.91140
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
3V @ 250µA
14 nC @ 4.5 V
±20V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D1
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Tc)
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VTR
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
3V @ 250µA
14 nC @ 5 V
±20V
-
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807VD1
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
3V @ 250µA
14 nC @ 4.5 V
±20V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7807D2PBF
MOSFET N-CH 30V 8.3A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
4.5V
25mOhm @ 7A, 4.5V
1V @ 250µA
17 nC @ 5 V
±12V
-
Schottky Diode (Isolated)
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
Showing
of 35

8.3A (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.