500A (Tc) Single FETs, MOSFETs

Results: 6
Manufacturer
IXYSLittelfuse Inc.Nexperia USA Inc.Vishay Siliconix
Series
-GigaMOS™, TrenchT2™TrenchFET® Gen IVTrenchT2™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
30 V40 V75 V
Rds On (Max) @ Id, Vgs
0.55mOhm @ 25A, 10V0.94mOhm @ 15A, 10V1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA3.6V @ 1mA5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V267 nC @ 10 V405 nC @ 10 V545 nC @ 10 V
Vgs (Max)
+20V, -10V±20V
Input Capacitance (Ciss) (Max) @ Vds
8095 pF @ 25 V21162 pF @ 25 V25000 pF @ 25 V41000 pF @ 25 V
Power Dissipation (Max)
375W (Tc)500W (Tc)830W (Tc)1000W (Tc)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
24-SMPDLFPAK88 (SOT1235)PowerPAK® SO-8TO-247 (IXTH)TO-268AA
Package / Case
24-PowerSMD, 21 LeadsPowerPAK® SO-8SOT-1235TO-247-3TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PSMN1R9-80SSEJ
BUK7S0R5-40HJ
BUK7S0R5-40H/SOT1235/LFPAK88
Nexperia USA Inc.
5,244
In Stock
1 : ¥50.41000
Cut Tape (CT)
2,000 : ¥26.77779
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
0.55mOhm @ 25A, 10V
3.6V @ 1mA
267 nC @ 10 V
+20V, -10V
21162 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
PSMN1R9-80SSEJ
PSMNR55-40SSHJ
PSMNR55-40SSH/SOT1235/LFPAK88
Nexperia USA Inc.
5,478
In Stock
1 : ¥57.14000
Cut Tape (CT)
2,000 : ¥30.35107
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
0.55mOhm @ 25A, 10V
3.6V @ 1mA
267 nC @ 10 V
±20V
21162 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
PowerPAK-SO-8L
SQJ126EP-T1_GE3
AUTOMOTIVE N-CHANNEL 30 V (D-S)
Vishay Siliconix
2,860
In Stock
1 : ¥13.63000
Cut Tape (CT)
3,000 : ¥6.15671
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500A (Tc)
10V
0.94mOhm @ 15A, 10V
3.5V @ 250µA
152 nC @ 10 V
±20V
8095 pF @ 25 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SMPD
MMIX1F520N075T2
MOSFET N-CH 75V 500A 24SMPD
IXYS
0
In Stock
Check Lead Time
1 : ¥192.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
5V @ 8mA
545 nC @ 10 V
±20V
41000 pF @ 25 V
-
830W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
TO-247-AD-EP-(H)
IXTH500N04T2
MOSFET N-CH 40V 500A TO247
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥120.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
3.5V @ 250µA
405 nC @ 10 V
±20V
25000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-268
IXTT500N04T2
MOSFET N-CH 40V 500A TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
300 : ¥89.93503
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
3.5V @ 250µA
405 nC @ 10 V
±20V
25000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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of 6

500A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.