5.9A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2343CDS-T1-GE3 MOSFET P-CH 30V 5.9A SOT23-3 Vishay Siliconix	17,563 In Stock	1 : ¥4.93000 Cut Tape (CT) 3,000 : ¥1.65104 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5.9A (Tc)	4.5V, 10V	45mOhm @ 4.2A, 10V	2.5V @ 250µA	21 nC @ 10 V	±20V	590 pF @ 15 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2365EDS-T1-GE3 MOSFET P-CH 20V 5.9A TO236 Vishay Siliconix	31,465 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.70201 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.9A (Tc)	1.8V, 4.5V	32mOhm @ 4A, 4.5V	1V @ 250µA	36 nC @ 8 V	±8V	-	-	1W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFI630GPBF MOSFET N-CH 200V 5.9A TO220-3 Vishay Siliconix	1,686 In Stock	1 : ¥23.31000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	5.9A (Tc)	10V	400mOhm @ 3.5A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	800 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
SCT2750NYTB SICFET N-CH 1700V 5.9A TO268 Rohm Semiconductor	0 In Stock Check Lead Time	1 : ¥55.17000 Cut Tape (CT) 400 : ¥37.09250 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.9A (Tc)	18V	975mOhm @ 1.7A, 18V	4V @ 630µA	17 nC @ 18 V	+22V, -6V	275 pF @ 800 V	-	57W (Tc)	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IRFI630G MOSFET N-CH 200V 5.9A TO220-3 Vishay Siliconix	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	5.9A (Tc)	10V	400mOhm @ 3.5A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	800 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
PMV31XN,215 MOSFET N-CH 20V 5.9A TO236AB NXP USA Inc.	0 In Stock	Obsolete	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.9A (Tc)	2.5V, 4.5V	37mOhm @ 1.5A, 4.5V	1.5V @ 1mA	5.8 nC @ 4.5 V	±12V	410 pF @ 20 V	-	280mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
FQAF8N80 MOSFET N-CH 800V 5.9A TO3PF onsemi	0 In Stock	Obsolete	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	5.9A (Tc)	10V	1.2Ohm @ 2.95A, 10V	5V @ 250µA	57 nC @ 10 V	±30V	2350 pF @ 25 V	-	107W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.