40A (Tj) Single FETs, MOSFETs

Results: 5
Manufacturer
Good-Ark SemiconductorInfineon TechnologiesMicro Commercial CoRohm Semiconductor
Series
-OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V60 V100 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V10V18V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V10.5mOhm @ 20A, 10V12mOhm @ 20A, 10V15mOhm @ 20A, 10V47mOhm @ 21A, 18V
Vgs(th) (Max) @ Id
3V @ 250µA3.4V @ 13µA3.4V @ 29µA4V @ 250µA4.8V @ 11.1mA
Gate Charge (Qg) (Max) @ Vgs
16.3 nC @ 10 V30.5 nC @ 10 V30.6 nC @ 10 V67 nC @ 10 V91 nC @ 18 V
Vgs (Max)
±20V+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1099 pF @ 30 V1684 pF @ 50 V2200 pF @ 30 V2335 pF @ 800 V3680 pF @ 20 V
Power Dissipation (Max)
42W (Tc)70W71W (Tc)80W (Tj)150W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
DFN5060PG-TSDSON-8-32PG-TSDSON-8-33TO-252 (DPAK)TO-263-7L
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IAUZ40N06S5N050ATMA1
IAUZ40N06S5N050ATMA1
MOSFET N-CH 60V 40A TSDSON-8-33
Infineon Technologies
10,159
In Stock
1 : ¥10.84000
Cut Tape (CT)
5,000 : ¥4.27626
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tj)
-
5mOhm @ 20A, 10V
3.4V @ 29µA
30.5 nC @ 10 V
±20V
2200 pF @ 30 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-33
8-PowerTDFN
SCT4026DW7HRTL
SCT4036KW7TL
1200V, 40A, 7-PIN SMD, TRENCH-ST
Rohm Semiconductor
796
In Stock
1 : ¥113.05000
Cut Tape (CT)
1,000 : ¥94.75222
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
40A (Tj)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
150W
175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MOSFET_)40V 60V) PG-TSDSON-8
IAUZ40N06S5N105ATMA1
MOSFET_)40V 60V) PG-TSDSON-8
Infineon Technologies
5,000
In Stock
1 : ¥7.88000
Cut Tape (CT)
5,000 : ¥3.11098
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tj)
7V, 10V
10.5mOhm @ 20A, 10V
3.4V @ 13µA
16.3 nC @ 10 V
±20V
1099 pF @ 30 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8-32
8-PowerTDFN
GSFD4005
GSFD4015
MOSFET, P-CH, SINGLE, -40.00A, -
Good-Ark Semiconductor
7,455
In Stock
1 : ¥4.02000
Cut Tape (CT)
2,500 : ¥1.34537
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
40A (Tj)
4.5V, 10V
15mOhm @ 20A, 10V
3V @ 250µA
67 nC @ 10 V
±20V
3680 pF @ 20 V
-
80W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DFN5060
MCAC40N10YA-TP
MOSFET N-CH 100V 40A DFN5060
Micro Commercial Co
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tj)
10V
12mOhm @ 20A, 10V
4V @ 250µA
30.6 nC @ 10 V
±20V
1684 pF @ 50 V
-
70W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5060
8-PowerTDFN
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40A (Tj) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.