28A (Ta), 50A (Tc) Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
Not For New DesignsObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V100 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
2820 pF @ 15 V5626 pF @ 10 V
Power Dissipation (Max)
4.2W (Ta), 42W (Tc)6.2W (Ta), 83W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-DFN-EP
AON7423
MOSFET P-CH 20V 28A/50A 8DFN
Alpha & Omega Semiconductor Inc.
86,637
In Stock
1 : ¥7.55000
Cut Tape (CT)
3,000 : ¥3.12391
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
28A (Ta), 50A (Tc)
1.5V, 4.5V
5mOhm @ 20A, 4.5V
900mV @ 250µA
100 nC @ 4.5 V
±8V
5626 pF @ 10 V
-
6.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
8-DFN-EP
AON7440
MOSFET N-CH 30V 28A/50A 8DFN
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
28A (Ta), 50A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2.3V @ 250µA
75 nC @ 10 V
±20V
2820 pF @ 15 V
-
4.2W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
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28A (Ta), 50A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.