Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-OptiMOS™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)2.3A (Ta)60A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V6V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 15A, 10V3mOhm @ 50A, 10V200mOhm @ 1.15A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.6V @ 250µA3.8V @ 95µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V64 nC @ 10 V76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V480 pF @ 25 V3250 pF @ 30 V5600 pF @ 40 V
Power Dissipation (Max)
225mW (Ta)2.4W (Ta)2.5W (Ta), 139W (Tc)69.4W (Tc)
Supplier Device Package
PG-TDSON-8-7PowerPAK® SO-8SOT-223-4SOT-23-3 (TO-236)
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR182DP-T1-RE3
MOSFET N-CH 60V 60A PPAK SO-8
Vishay Siliconix
16,484
In Stock
1 : ¥13.14000
Cut Tape (CT)
3,000 : ¥5.91119
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
7.5V, 10V
2.8mOhm @ 15A, 10V
3.6V @ 250µA
64 nC @ 10 V
±20V
3250 pF @ 30 V
-
69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC030N08NS5ATMA1
MOSFET N-CH 80V 100A TDSON
Infineon Technologies
18,695
In Stock
1 : ¥18.39000
Cut Tape (CT)
5,000 : ¥7.97515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3mOhm @ 50A, 10V
3.8V @ 95µA
76 nC @ 10 V
±20V
5600 pF @ 40 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
SOT 23-3
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
15,547
In Stock
1 : ¥2.22000
Cut Tape (CT)
10,000 : ¥0.28474
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT223-3L
IRFM120ATF
MOSFET N-CH 100V 2.3A SOT223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥6.49000
Cut Tape (CT)
4,000 : ¥2.48018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2.3A (Ta)
10V
200mOhm @ 1.15A, 10V
4V @ 250µA
22 nC @ 10 V
±20V
480 pF @ 25 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.