Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
EHEXFET®QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
25 V600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)5.8A (Ta)13A (Tc)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
24mOhm @ 5.8A, 10V99mOhm @ 16.5A, 10V309mOhm @ 7A, 10V11.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.35V @ 10µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V6.2 nC @ 10 V64 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V430 pF @ 10 V1205 pF @ 100 V3508 pF @ 100 V
Power Dissipation (Max)
1.25W (Ta)2.1W (Tc)147W (Tc)278W (Tc)
Supplier Device Package
DPAKSOT-223-4SOT-23TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRFML8244TRPBF
MOSFET N-CH 25V 5.8A SOT23
Infineon Technologies
34,605
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.85128
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
5.8A (Ta)
4.5V, 10V
24mOhm @ 5.8A, 10V
2.35V @ 10µA
5.4 nC @ 10 V
±20V
430 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SOT223-3L
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
onsemi
6,940
In Stock
1 : ¥5.99000
Cut Tape (CT)
4,000 : ¥2.27459
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
200mA (Tc)
10V
11.5Ohm @ 100mA, 10V
4V @ 250µA
6.2 nC @ 10 V
±30V
170 pF @ 25 V
-
2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
TO-252
SIHD14N60E-GE3
MOSFET N-CH 600V 13A DPAK
Vishay Siliconix
3,306
In Stock
1 : ¥18.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
309mOhm @ 7A, 10V
4V @ 250µA
64 nC @ 10 V
±30V
1205 pF @ 100 V
-
147W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263AB
SIHB33N60ET1-GE3
MOSFET N-CH 600V 33A TO263
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥48.77000
Cut Tape (CT)
800 : ¥29.45314
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150 nC @ 10 V
±30V
3508 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.