Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedNexperia USA Inc.STMicroelectronics
Series
-STripFET™ F6TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)3.8A (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
14mOhm @ 6.5A, 10V65mOhm @ 3.8A, 10V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)1.5V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V5.2 nC @ 4.5 V34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V563 pF @ 25 V3525 pF @ 25 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)1.08W (Ta)100W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)175°C (TJ)
Supplier Device Package
PowerFlat™ (5x6)SOT-23-3TO-236AB
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
820,852
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34432
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
330,793
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.50543
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerFlat™
STL60P4LLF6
MOSFET P-CH 40V 60A POWERFLAT
STMicroelectronics
8,367
In Stock
1 : ¥12.31000
Cut Tape (CT)
3,000 : ¥5.55165
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
60A (Tc)
4.5V, 10V
14mOhm @ 6.5A, 10V
1V @ 250µA (Min)
34 nC @ 4.5 V
±20V
3525 pF @ 25 V
-
100W (Tc)
175°C (TJ)
-
-
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.