Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9Z24NPBF MOSFET P-CH 55V 12A TO220AB Infineon Technologies	5,498 In Stock	1 : ¥6.57000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	12A (Tc)	10V	175mOhm @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
VP3203N3-G MOSFET P-CH 30V 650MA TO92-3 Microchip Technology	1,550 In Stock	1 : ¥15.19000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	30 V	650mA (Tj)	4.5V, 10V	600mOhm @ 3A, 10V	3.5V @ 10mA	-	±20V	300 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
LP0701N3-G MOSFET P-CH 16.5V 500MA TO92 Microchip Technology	482 In Stock	1 : ¥16.09000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	16.5 V	500mA (Tj)	2V, 5V	1.5Ohm @ 300mA, 5V	1V @ 1mA	-	±10V	250 pF @ 15 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.