Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMP3125L-7 MOSFET P-CH 30V 2.5A SOT23 Diodes Incorporated	522,532 In Stock 528,000 Factory	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.57762 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	4.5V, 10V	95mOhm @ 3.8A, 10V	2.1V @ 250µA	3.1 nC @ 4.5 V	±20V	254 pF @ 25 V	-	650mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG2307L-7 MOSFET P-CH 30V 2.5A SOT-23 Diodes Incorporated	105,581 In Stock 645,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.70205 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	4.5V, 10V	90mOhm @ 2.5A, 10V	3V @ 250µA	8.2 nC @ 10 V	±20V	371.3 pF @ 15 V	-	760mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD18513Q5A MOSFET N-CH 40V 124A 8VSON Texas Instruments	6,316 In Stock	1 : ¥9.20000 Cut Tape (CT) 2,500 : ¥3.79172 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	124A (Tc)	4.5V, 10V	5.3mOhm @ 19A, 10V	2.4V @ 250µA	61 nC @ 10 V	±20V	4280 pF @ 20 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.