Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiSTMicroelectronicsToshiba Semiconductor and StorageVishay Siliconix
Series
-STripFET™ IITrenchFET® Gen IVU-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)4A (Tc)4.2A (Ta)12.7A (Ta), 18.3A (Tc)58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 29A, 10V9.5mOhm @ 10A, 10V52mOhm @ 4.2A, 4.5V100mOhm @ 1.5A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2.2V @ 250µA2.4V @ 500µA2.5V @ 250µA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 5 V10.2 nC @ 4.5 V41 nC @ 10 V60 nC @ 10 V
Vgs (Max)
±8V+16V, -20V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V340 pF @ 25 V808 pF @ 15 V1620 pF @ 15 V4670 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)1.4W (Ta)2.3W (Ta), 4.8W (Tc)3.3W (Tc)87W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-SOICDPAKSOT-223SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-13
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
418,576
In Stock
3,450,000
Factory
1 : ¥3.20000
Cut Tape (CT)
10,000 : ¥0.41722
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT223-3L
STN3NF06L
MOSFET N-CH 60V 4A SOT223
STMicroelectronics
73,046
In Stock
1 : ¥8.13000
Cut Tape (CT)
4,000 : ¥3.36140
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Tc)
5V, 10V
100mOhm @ 1.5A, 10V
2.8V @ 250µA
9 nC @ 5 V
±16V
340 pF @ 25 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT 23-3
2N7002LT7G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
57,057
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,500 : ¥0.33717
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4425FDY-T1-GE3
MOSFET P-CH 30V 12.7/18.3A 8SOIC
Vishay Siliconix
12,537
In Stock
1 : ¥5.66000
Cut Tape (CT)
2,500 : ¥2.14212
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12.7A (Ta), 18.3A (Tc)
4.5V, 10V
9.5mOhm @ 10A, 10V
2.2V @ 250µA
41 nC @ 10 V
+16V, -20V
1620 pF @ 15 V
-
2.3W (Ta), 4.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
21,987
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.67884
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
58A (Tc)
4.5V, 10V
3.1mOhm @ 29A, 10V
2.4V @ 500µA
60 nC @ 10 V
±20V
4670 pF @ 20 V
-
87W (Tc)
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.