Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)154mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
7Ohm @ 154mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 100µA2.5V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 5 V50 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)300mW (Tj)
Supplier Device Package
SC-75, SOT-416SOT-23-3 (TO-236)
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
413,995
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SC−75-3_463
NTA7002NT1G
MOSFET N-CH 30V 154MA SC75
onsemi
225,772
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46914
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
154mA (Tj)
2.5V, 4.5V
7Ohm @ 154mA, 4.5V
1.5V @ 100µA
±10V
20 pF @ 5 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.