21A (Ta), 40A (Tc) Single FETs, MOSFETs

Results: 7
Series
-HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V2.8mOhm @ 30A, 10V3.5mOhm @ 20A, 4.5V3.8mOhm @ 20A, 10V4.6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
1.1V @ 50µA2V @ 250µA2.35V @ 50µA2.4V @ 100µA-
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V31 nC @ 10 V32 nC @ 10 V58 nC @ 4.5 V62 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V2155 pF @ 25 V2300 pF @ 20 V3170 pF @ 25 V5250 pF @ 15 V
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)2.5W (Ta), 48W (Tc)2.7W (Ta), 37W (Tc)3.1W (Ta)
Supplier Device Package
8-PQFN-Dual (3.3x3.3)PG-TSDSON-8-FLPQFN (3x3)PQFN (5x6)
Package / Case
8-PowerTDFN8-PowerVDFN8-VQFN Exposed Pad
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFHM830DTR2PBF
IRLHM630TRPBF
MOSFET N-CH 30V 21A/40A PQFN
Infineon Technologies
16,063
In Stock
1 : ¥8.29000
Cut Tape (CT)
4,000 : ¥3.42951
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
2.5V, 10V
3.5mOhm @ 20A, 4.5V
1.1V @ 50µA
62 nC @ 4.5 V
±12V
3170 pF @ 25 V
-
2.7W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (3x3)
8-VQFN Exposed Pad
TSDSON-8
BSZ028N04LSATMA1
MOSFET N-CH 40V 21A/40A TSDSON
Infineon Technologies
16,082
In Stock
1 : ¥10.02000
Cut Tape (CT)
5,000 : ¥3.94747
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
21A (Ta), 40A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
-
32 nC @ 10 V
±20V
2300 pF @ 20 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IRFH9310TRPBF
IRFH9310TRPBF
MOSFET P-CH 30V 21A/40A PQFN
Infineon Technologies
6,254
In Stock
1 : ¥12.89000
Cut Tape (CT)
4,000 : ¥5.32991
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
4.5V, 10V
4.6mOhm @ 21A, 10V
2.4V @ 100µA
58 nC @ 4.5 V
±20V
5250 pF @ 15 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerVDFN
IRFHM830DTR2PBF
IRFHM830TRPBF
MOSFET N-CH 30V 21A/40A PQFN
Infineon Technologies
8,108
In Stock
1 : ¥7.39000
Cut Tape (CT)
4,000 : ¥3.04695
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
2.35V @ 50µA
31 nC @ 10 V
±20V
2155 pF @ 25 V
-
2.7W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN-Dual (3.3x3.3)
8-PowerVDFN
TSDSON-8
BSZ0902NSIATMA1
MOSFET N-CH 30V 21A/40A TSDSON
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥9.69000
Cut Tape (CT)
5,000 : ¥3.82782
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
4.5V, 10V
2.8mOhm @ 30A, 10V
2V @ 250µA
24 nC @ 10 V
±20V
1500 pF @ 15 V
-
2.5W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IRFHM830DTR2PBF
IRFHM830TR2PBF
MOSFET N-CH 30V 21A PQFN
Infineon Technologies
0
In Stock
1 : ¥9.03000
Cut Tape (CT)
-
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
-
3.8mOhm @ 20A, 10V
2.35V @ 50µA
31 nC @ 10 V
-
2155 pF @ 25 V
-
-
-
Surface Mount
PQFN (3x3)
8-VQFN Exposed Pad
IRFHM830DTR2PBF
IRLHM630TR2PBF
MOSFET N-CH 30V 21A PQFN
Infineon Technologies
0
In Stock
1 : ¥13.46000
Cut Tape (CT)
-
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
-
3.5mOhm @ 20A, 4.5V
1.1V @ 50µA
62 nC @ 4.5 V
-
3170 pF @ 25 V
-
-
-
Surface Mount
PQFN (3x3)
8-VQFN Exposed Pad
Showing
of 7

21A (Ta), 40A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.