209A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFP2907PBF MOSFET N-CH 75V 209A TO247AC Infineon Technologies	6,927 In Stock	1 : ¥46.88000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	209A (Tc)	10V	4.5mOhm @ 125A, 10V	4V @ 250µA	620 nC @ 10 V	±20V	13000 pF @ 25 V	-	470W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRL7486MTRPBF MOSFET N-CH 40V 209A DIRECTFET Infineon Technologies	4,375 In Stock	1 : ¥20.44000 Cut Tape (CT) 4,800 : ¥8.86140 Tape & Reel (TR)	HEXFET®, StrongIRFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	209A (Tc)	4.5V, 10V	1.25mOhm @ 123A, 10V	2.5V @ 150µA	111 nC @ 4.5 V	±20V	6904 pF @ 25 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric ME	DirectFET™ Isometric ME
IPF023N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-7 Infineon Technologies	800 In Stock	1 : ¥28.49000 Cut Tape (CT) 800 : ¥17.21016 Tape & Reel (TR)	StrongIRFET™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	209A (Tc)	6V, 10V	2.3mOhm @ 100A, 10V	3.8V @ 139µA	133 nC @ 10 V	±20V	6200 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GT011N03D5E MOSFET N-CH ESD 30V 209A DFN5*6- Goford Semiconductor	4,987 In Stock	1 : ¥12.97000 Cut Tape (CT) 5,000 : ¥5.09873 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	209A (Tc)	4.5V, 10V	-	2.5V @ 250µA	98 nC @ 10 V	±16V	6503 pF @ 15 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
GT011N03ME MOSFET N-CH ESD 30V A TO-263 Goford Semiconductor	800 In Stock	1 : ¥14.04000 Cut Tape (CT) 800 : ¥7.85336 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	209A (Tc)	4.5V, 10V	1.6mOhm @ 10A, 10V	2.5V @ 250µA	98 nC @ 10 V	±18V	6140 pF @ 15 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF100P218AKMA1 MOSFET N-CH 100V 209A TO247AC Infineon Technologies	1 In Stock	1 : ¥67.81000 Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	1.28mOhm @ 100A, 10V	3.8V @ 278µA	412 nC @ 10 V	±20V	24000 pF @ 50 V	-	3.8W (Ta), 556W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF100P218XKMA1 MOSFET N-CH 100V 209A TO247AC Infineon Technologies	0 In Stock	400 : ¥41.45988 Tube	StrongIRFET™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	1.28mOhm @ 100A, 10V	3.8V @ 278µA	555 nC @ 10 V	±20V	25000 pF @ 50 V	-	556W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3

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209A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.