FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

EPC2106 GANFET 2N-CH 100V 1.7A DIE EPC	61,812 In Stock	1 : ¥15.19000 Cut Tape (CT) 2,500 : ¥6.83758 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	1.7A	70mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2103 GANFET 2N-CH 80V 28A DIE EPC	5,983 In Stock	1 : ¥79.96000 Cut Tape (CT) 500 : ¥50.37382 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	80V	28A	5.5mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	760pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2104 GANFET 2N-CH 100V 23A DIE EPC	4,416 In Stock	1 : ¥75.94000 Cut Tape (CT) 500 : ¥47.88624 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2102 GANFET 2N-CH 60V 23A DIE EPC	3,615 In Stock	1 : ¥75.94000 Cut Tape (CT) 500 : ¥47.88624 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	60V	23A	4.4mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.