Renesas Electronics Corporation Single Bipolar Transistors

Results: 15
Series
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Packaging
BulkTape & Reel (TR)Tube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA150 mA500 mA7 A
Voltage - Collector Emitter Breakdown (Max)
16 V50 V100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA300mV @ 5mA, 50mA400mV @ 20mA, 500mA600mV @ 500mA, 5A
Current - Collector Cutoff (Max)
100nA (ICBO)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 3A, 5V90 @ 1mA, 6V110 @ 100mA, 1V1000 @ 1mA, 5V
Power - Max
150 mW200 mW1.5 W
Frequency - Transition
50MHz180MHz250MHz-
Mounting Type
Surface MountThrough Hole
Package / Case
SC-70, SOT-323TO-220-3TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59SC-70TO-220AB
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Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IC TRANS TIP NPN 100V 3A TO-220
TIP31C
IC TRANS TIP NPN 100V 3A TO-220
Renesas Electronics Corporation
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Tape & Reel (TR)
Obsolete
NPN
150 mA
50 V
300mV @ 5mA, 50mA
100nA (ICBO)
1000 @ 1mA, 5V
200 mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
0
In Stock
Obsolete
-
Bulk
Obsolete
PNP
500 mA
16 V
400mV @ 20mA, 500mA
100nA (ICBO)
110 @ 100mA, 1V
150 mW
50MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
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Tape & Reel (TR)
Obsolete
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PNP
100 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
90 @ 1mA, 6V
150 mW
180MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
0
In Stock
Obsolete
-
Tube
Obsolete
NPN
7 A
100 V
600mV @ 500mA, 5A
10µA
40 @ 3A, 5V
1.5 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
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Renesas Electronics Corporation Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.