Single IGBTs

Results: 4
Series
TrenchStop®TrenchStop™TrenchStop™ 5
IGBT Type
-TrenchTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector (Ic) (Max)
40 A80 A85 A
Current - Collector Pulsed (Icm)
80 A200 A300 A
Vce(on) (Max) @ Vge, Ic
1.35V @ 15V, 75A1.75V @ 15V, 75A2.1V @ 15V, 50A2.4V @ 15V, 20A
Power - Max
170 W273 W395 W536 W
Switching Energy
410µJ (on), 190µJ (off)800µJ1.61mJ (on), 3.2mJ (off)2.4mJ (on), 950µJ (off)
Gate Charge
109 nC120 nC164 nC436 nC
Td (on/off) @ 25°C
17ns/194ns20ns/250ns40ns/144ns40ns/275ns
Test Condition
400V, 20A, 14.6Ohm, 15V400V, 25A, 12Ohm, 15V400V, 75A, 18Ohm, 15V400V, 75A, 4Ohm, 15V
Reverse Recovery Time (trr)
53 ns85 ns112 ns114 ns
Package / Case
TO-247-3TO-247-4
Supplier Device Package
PG-TO247-3PG-TO247-3-1PG-TO247-4
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Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3
IKW20N60H3FKSA1
IGBT TRENCH FS 600V 40A TO247-3
Infineon Technologies
238
In Stock
1 : ¥22.74000
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Trench Field Stop
600 V
40 A
80 A
2.4V @ 15V, 20A
170 W
800µJ
Standard
120 nC
17ns/194ns
400V, 20A, 14.6Ohm, 15V
112 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
TO-247-4
IKZ50N65EH5XKSA1
IGBT TRENCH 650V 85A TO247-4
Infineon Technologies
422
In Stock
1 : ¥51.39000
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Trench
650 V
85 A
200 A
2.1V @ 15V, 50A
273 W
410µJ (on), 190µJ (off)
Standard
109 nC
20ns/250ns
400V, 25A, 12Ohm, 15V
53 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
AUIRFP4310Z BACK
IKW75N65ES5XKSA1
IGBT TRENCH 650V 80A TO247-3
Infineon Technologies
14,370
In Stock
1 : ¥56.40000
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Trench
650 V
80 A
300 A
1.75V @ 15V, 75A
395 W
2.4mJ (on), 950µJ (off)
Standard
164 nC
40ns/144ns
400V, 75A, 18Ohm, 15V
85 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
296
In Stock
1 : ¥66.25000
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650 V
80 A
300 A
1.35V @ 15V, 75A
536 W
1.61mJ (on), 3.2mJ (off)
Standard
436 nC
40ns/275ns
400V, 75A, 4Ohm, 15V
114 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.