Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IKFW75N65EH5XKSA1 IGBT TRENCH FS 650V 80A HSIP247 Infineon Technologies	370 In Stock	1 : ¥79.64000 Tube	Trenchstop™ 5	Tube	Active	Trench Field Stop	650 V	80 A	240 A	2.1V @ 15V, 60A	148 W	1.8mJ (on), 600µJ (off)	Standard	144 nC	30ns/206ns	400V, 60A, 12Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
IGB50N65H5ATMA1 IGBT TRENCH FS 650V 80A TO263-3 Infineon Technologies	3,000 In Stock	1 : ¥27.75000 Cut Tape (CT) 1,000 : ¥14.33970 Tape & Reel (TR)	TrenchStop™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	Trench Field Stop	650 V	80 A	150 A	2.1V @ 15V, 50A	270 W	1.59mJ (on), 750µJ (off)	Standard	120 nC	23ns/173ns	400V, 50A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.