Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IXBH20N360HV IGBT 3600V 70A TO247HV IXYS	1,059 In Stock	1 : ¥862.23000 Tube	BIMOSFET™	Tube	Active	-	3600 V	70 A	220 A	3.4V @ 15V, 20A	430 W	15.5mJ (on), 4.3mJ (off)	Standard	110 nC	18ns/238ns	1500V, 20A, 10Ohm, 15V	1.7 µs	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	TO-247HV
STGWA50H65DFB2 DISCRETE STMicroelectronics	240 In Stock	1 : ¥34.15000 Bulk	-	Bulk	Active	Trench Field Stop	650 V	86 A	150 A	2V @ 15V, 50A	272 W	910µJ (on), 580µJ (off)	Standard	151 nC	28ns/115ns	400V, 50A, 4.7Ohm, 15V	92 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.