Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesWolfspeed, Inc.
Series
C3M™StrongIRFET™
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)33A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V15V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
3.3V @ 129µA3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 15 V162 nC @ 10 V
Vgs (Max)
+15V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 1000 V7300 pF @ 30 V
Power Dissipation (Max)
3.8W (Ta), 188W (Tc)50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO220-3-U05TO-247-3
Package / Case
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IPP019N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
Infineon Technologies
668
In Stock
1 : ¥17.24000
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
33A (Ta), 185A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.3V @ 129µA
162 nC @ 10 V
±20V
7300 pF @ 30 V
-
3.8W (Ta), 188W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-U05
TO-220-3
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
3,172
In Stock
1 : ¥60.75000
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Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.