Single FETs, MOSFETs

Results: 5
Manufacturer
Central Semiconductor CorpDiodes IncorporatedInfineon TechnologiesNexperia USA Inc.
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
1.78A (Ta)5.8A (Ta)9A (Ta)23A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V3V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 10V14mOhm @ 9A, 4.5V28mOhm @ 5.8A, 10V117mOhm @ 14A, 10V460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA1.95V @ 1mA2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.79 nC @ 4.5 V9.2 nC @ 10 V34 nC @ 4.5 V39 nC @ 10 V110 nC @ 10 V
Vgs (Max)
8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
43 pF @ 25 V386 pF @ 15 V1450 pF @ 25 V2175 pF @ 10 V2542 pF @ 12 V
Power Dissipation (Max)
100mW (Ta)720mW (Ta)1.7W (Ta), 12.5W (Tc)3.1W (Ta), 110W (Tc)106W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKDFN2020MD-6LFPAK56, Power-SO8SOT-23-3SOT-883
Package / Case
6-UDFN Exposed PadSC-100, SOT-669SC-101, SOT-883TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
21,017
In Stock
543,000
Factory
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59843
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
±20V
386 pF @ 15 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
41,114
In Stock
1 : ¥4.76000
Cut Tape (CT)
8,000 : ¥1.72379
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.78A (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
1V @ 250µA
0.79 nC @ 4.5 V
8V
43 pF @ 25 V
-
100mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540NSTRLPBF
MOSFET P-CH 100V 23A D2PAK
Infineon Technologies
3,146
In Stock
1 : ¥15.68000
Cut Tape (CT)
800 : ¥8.76123
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 14A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
1450 pF @ 25 V
-
3.1W (Ta), 110W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LFPAK56/POWER-SO8/SOT669
PSMN2R2-25YLC,115
MOSFET N-CH 25V 100A LFPAK56
Nexperia USA Inc.
6,751
In Stock
1 : ¥7.55000
Cut Tape (CT)
1,500 : ¥3.31116
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
100A (Tc)
4.5V, 10V
2.4mOhm @ 25A, 10V
1.95V @ 1mA
39 nC @ 10 V
±20V
2542 pF @ 12 V
-
106W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
6-DFN2020MD_View 2
PMPB10XNEZ
MOSFET N-CH 20V 9A DFN2020MD-6
Nexperia USA Inc.
17,549
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.09945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
14mOhm @ 9A, 4.5V
900mV @ 250µA
34 nC @ 4.5 V
±12V
2175 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.