Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedNexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)590mA (Ta)6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 5.8A, 10V495mOhm @ 400mA, 4.5V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Typ)2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V1.54 nC @ 8 V14 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V80 pF @ 10 V440 pF @ 15 V
Power Dissipation (Max)
240mW (Ta)320mW (Ta)700mW (Ta), 8.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3SOT-523TO-236AB
Package / Case
SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
314,312
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.21990
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-523
DMP21D0UT-7
MOSFET P-CH 20V 590MA SOT523
Diodes Incorporated
292,526
In Stock
1,116,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68272
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
590mA (Ta)
1.8V, 4.5V
495mOhm @ 400mA, 4.5V
700mV @ 250µA (Typ)
1.54 nC @ 8 V
±8V
80 pF @ 10 V
-
240mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
TO-236AB
PMV15ENER
PMV15ENE/SOT23/TO-236AB
Nexperia USA Inc.
4,380
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.91611
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.2A (Ta)
4.5V, 10V
20mOhm @ 5.8A, 10V
2.5V @ 250µA
14 nC @ 10 V
±20V
440 pF @ 15 V
-
700mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.