Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial CoToshiba Semiconductor and Storage
Series
-U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
45mOhm @ 5A, 10V2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.8V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
12 pF @ 10 V330 pF @ 20 V
Power Dissipation (Max)
150mW (Ta)1.2W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23VESM
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
22,662
In Stock
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.5V, 4.5V
2.2Ohm @ 100mA, 4.5V
1V @ 1mA
-
±10V
12 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
8,898
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.53747
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
5A (Ta)
4.5V, 10V
45mOhm @ 5A, 10V
1.8V @ 250µA
5.4 nC @ 10 V
±20V
330 pF @ 20 V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.