Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesTexas InstrumentsToshiba Semiconductor and StorageVishay Siliconix
Series
HEXFET®NexFET™TrenchFET®U-MOSIX-HU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®StripTape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)20A (Ta), 60A (Tc)22A (Ta)48A (Tc)60A (Ta)120A (Tc)150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 25A, 10V4mOhm @ 20A, 10V4.7mOhm @ 30A, 10V5.4mOhm @ 18A, 8V9.7mOhm @ 15A, 4.5V11.9mOhm @ 11A, 10V29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.7V @ 250µA2V @ 250µA2.1V @ 1mA2.35V @ 25µA2.4V @ 200µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 4.5 V9.3 nC @ 4.5 V10 nC @ 4.5 V24 nC @ 10 V110 nC @ 10 V160 nC @ 10 V450 nC @ 10 V
Vgs (Max)
+10V, -20V+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
468 pF @ 15 V760 pF @ 15 V1440 pF @ 15 V2040 pF @ 20 V5640 pF @ 10 V6490 pF @ 50 V23600 pF @ 25 V
Power Dissipation (Max)
960mW (Ta), 132W (Tc)2.5W (Ta)2.8W (Ta)69W (Tc)157W (Tc)278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)175°C
Supplier Device Package
6-SON (2x2)8-SO8-SOP Advance (5x5)8-VSON-CLIP (3.3x3.3)TO-263 (D2PAK)
Package / Case
6-WDFN Exposed Pad8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
12,094
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.88016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
48A (Tc)
4.5V, 10V
9.7mOhm @ 15A, 4.5V
2.4V @ 200µA
24 nC @ 10 V
±20V
2040 pF @ 20 V
-
69W (Tc)
175°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
43,399
In Stock
1 : ¥13.55000
Cut Tape (CT)
5,000 : ¥5.86975
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
60A (Ta)
4.5V, 10V
4.7mOhm @ 30A, 10V
2.1V @ 1mA
160 nC @ 10 V
+10V, -20V
5640 pF @ 10 V
-
960mW (Ta), 132W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
6-WDFN Exposed Pad
CSD17571Q2
MOSFET N-CH 30V 22A 6SON
Texas Instruments
24,351
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.32633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta)
4.5V, 10V
29mOhm @ 5A, 4.5V
2V @ 250µA
3.1 nC @ 4.5 V
±20V
468 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-SON (2x2)
6-WDFN Exposed Pad
IRF8707TRPBF
MOSFET N-CH 30V 11A 8SO
Infineon Technologies
25,911
In Stock
1 : ¥4.43000
Cut Tape (CT)
4,000 : ¥1.50428
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta)
4.5V, 10V
11.9mOhm @ 11A, 10V
2.35V @ 25µA
9.3 nC @ 4.5 V
±20V
760 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
CSD1632x Series 8-SON
CSD17309Q3
MOSFET N-CH 30V 20A/60A 8VSON
Texas Instruments
6,999
In Stock
1 : ¥8.95000
Cut Tape (CT)
2,500 : ¥3.71667
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta), 60A (Tc)
3V, 8V
5.4mOhm @ 18A, 8V
1.7V @ 250µA
10 nC @ 4.5 V
+10V, -8V
1440 pF @ 15 V
-
2.8W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
TO-263 (D2Pak)
SQM40041EL_GE3
MOSFET P-CH 40V 120A TO263
Vishay Siliconix
1,288
In Stock
1 : ¥22.17000
Cut Tape (CT)
800 : ¥13.38699
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
3.4mOhm @ 25A, 10V
2.5V @ 250µA
450 nC @ 10 V
±20V
23600 pF @ 25 V
-
157W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
SUM70042E-GE3
N-CHANNEL 100-V (D-S) MOSFET D2P
Vishay Siliconix
1,933
In Stock
1 : ¥23.56000
Strip
Strip
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Tc)
7.5V, 10V
4mOhm @ 20A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
6490 pF @ 50 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.