Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2301CDS-T1-GE3 MOSFET P-CH 20V 3.1A SOT23-3 Vishay Siliconix	190,298 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.82529 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.1A (Tc)	2.5V, 4.5V	112mOhm @ 2.8A, 4.5V	1V @ 250µA	10 nC @ 4.5 V	±8V	405 pF @ 10 V	-	860mW (Ta), 1.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFL9014TRPBF MOSFET P-CH 60V 1.8A SOT223 Vishay Siliconix	71,118 In Stock	1 : ¥7.39000 Cut Tape (CT) 2,500 : ¥3.05128 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.8A (Tc)	10V	500mOhm @ 1.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL014NTRPBF MOSFET N-CH 55V 1.9A SOT223 Infineon Technologies	12,826 In Stock	1 : ¥5.42000 Cut Tape (CT) 2,500 : ¥2.07004 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	1.9A (Ta)	10V	160mOhm @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	190 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.