Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 18A, 4.5V1.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.5V @ 1mA
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 10 V4300 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)42W (Tc)
Supplier Device Package
8-TSON Advance (3.1x3.1)VMT3
Package / Case
8-PowerVDFNSOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RSM002P03T2L
MOSFET P-CH 30V 200MA VMT3
Rohm Semiconductor
21,648
In Stock
This product has a maximum purchase limit
1 : ¥2.71000
Cut Tape (CT)
8,000 : ¥1.07755
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
200mA (Ta)
4V, 10V
1.4Ohm @ 200mA, 10V
2.5V @ 1mA
-
±20V
30 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
4,040
In Stock
1 : ¥6.49000
Cut Tape (CT)
5,000 : ¥2.33525
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
36A (Tc)
2.5V, 4.5V
4.7mOhm @ 18A, 4.5V
1.2V @ 1mA
65 nC @ 5 V
±12V
4300 pF @ 10 V
-
42W (Tc)
150°C (TJ)
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.