Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedNexperia USA Inc.STMicroelectronics
Series
-STripFET™ F6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)10A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V, 10V10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 25A, 10V120mOhm @ 2.8A, 4.5V180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.1V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V16.5 nC @ 10 V66.8 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
476 pF @ 10 V864 pF @ 80 V5026 pF @ 25 V
Power Dissipation (Max)
1.5W (Ta)40W (Tc)167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
DPAKLFPAK56, Power-SO8SOT-23-3
Package / Case
SC-100, SOT-669TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
180,583
In Stock
900,000
Factory
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
LFPAK56/POWER-SO8/SOT669
PSMN5R6-60YLX
MOSFET N-CH 60V 100A LFPAK56
Nexperia USA Inc.
10,834
In Stock
1 : ¥8.78000
Cut Tape (CT)
1,500 : ¥3.87487
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
5V, 10V
5.6mOhm @ 25A, 10V
2.1V @ 1mA
66.8 nC @ 10 V
±20V
5026 pF @ 25 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
MFG_DPAK(TO252-3)
STD10P10F6
MOSFET P-CH 100V 10A DPAK
STMicroelectronics
4,941
In Stock
1 : ¥8.37000
Cut Tape (CT)
2,500 : ¥3.45193
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
10V
180mOhm @ 5A, 10V
4V @ 250µA
16.5 nC @ 10 V
±20V
864 pF @ 80 V
-
40W (Tc)
175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.