Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiTexas Instruments
Series
-NexFET™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)5A (Tc)30A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V30mOhm @ 4A, 8V2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.81 nC @ 5 V2.7 nC @ 4.5 V61 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 25 V340 pF @ 15 V5235 pF @ 15 V
Power Dissipation (Max)
300mW (Tj)2.3W (Ta)2.5W (Ta), 83W (Tc)
Supplier Device Package
6-WSON (2x2)8-PQFN (5x6)SOT-23-3 (TO-236)
Package / Case
6-WDFN Exposed Pad8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002ET7G
MOSFET N-CH 60V 260MA SOT23-3
onsemi
25,921
In Stock
45,500
Factory
1 : ¥1.72000
Cut Tape (CT)
3,500 : ¥0.28404
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.81 nC @ 5 V
±20V
40 pF @ 25 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
CSD-6-SON Pkg
CSD17313Q2
MOSFET N-CH 30V 5A 6WSON
Texas Instruments
18,095
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30868
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Tc)
3V, 8V
30mOhm @ 4A, 8V
1.8V @ 250µA
2.7 nC @ 4.5 V
+10V, -8V
340 pF @ 15 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
8-PQFN
FDMS8018
MOSFET N-CH 30V 30A/120A 8PQFN
onsemi
24,293
In Stock
1 : ¥13.96000
Cut Tape (CT)
3,000 : ¥6.30048
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta), 120A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
3V @ 250µA
61 nC @ 10 V
±20V
5235 pF @ 15 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.