Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedLittelfuse Inc.onsemiVishay Siliconix
Series
-PolarTrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V200 V300 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)5A (Ta)6.5A (Ta), 21A (Tc)88A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6.9mOhm @ 30A, 10V38mOhm @ 5A, 10V40mOhm @ 44A, 10V44mOhm @ 4.3A, 10V1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA3V @ 250µA3V @ 26µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V14.5 nC @ 10 V22.4 nC @ 10 V180 nC @ 10 V345 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 100 V500 pF @ 50 V1287 pF @ 25 V6300 pF @ 25 V11400 pF @ 25 V
Power Dissipation (Max)
1.2W (Ta)3.5W (Ta), 19W (Tc)3.5W (Ta), 36W (Tc)3.75W (Ta), 375W (Tc)600W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PowerPAK® SC-70-6TO-263 (D2PAK)TO-268AATSOT-26
Package / Case
8-PowerTDFN, 5 LeadsPowerPAK® SC-70-6SOT-23-6 Thin, TSOT-23-6TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA456DJ-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SC70
Vishay Siliconix
22,353
In Stock
1 : ¥7.39000
Cut Tape (CT)
3,000 : ¥3.05582
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
1.8V, 4.5V
1.38Ohm @ 750mA, 4.5V
1.4V @ 250µA
14.5 nC @ 10 V
±16V
350 pF @ 100 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
TO-263 (D2Pak)
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
Vishay Siliconix
68,316
In Stock
1 : ¥30.13000
Cut Tape (CT)
800 : ¥18.18145
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
4.5V, 10V
6.9mOhm @ 30A, 10V
3V @ 250µA
345 nC @ 10 V
±20V
11400 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSOT-26
DMN6040SVT-7
MOSFET N CH 60V 5A TSOT26
Diodes Incorporated
5,611
In Stock
168,000
Factory
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.45045
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5A (Ta)
4.5V, 10V
44mOhm @ 4.3A, 10V
3V @ 250µA
22.4 nC @ 10 V
±20V
1287 pF @ 25 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
5-DFN, 8-SO Flat Lead
NVMFS040N10MCLT1G
PTNG 100V LL SO8FL
onsemi
5,081
In Stock
1 : ¥5.66000
Cut Tape (CT)
1,500 : ¥2.41979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
6.5A (Ta), 21A (Tc)
4.5V, 10V
38mOhm @ 5A, 10V
3V @ 26µA
8.3 nC @ 10 V
±20V
500 pF @ 50 V
-
3.5W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
TO-268
IXTT88N30P
MOSFET N-CH 300V 88A TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥107.05000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
88A (Tc)
10V
40mOhm @ 44A, 10V
5V @ 250µA
180 nC @ 10 V
±20V
6300 pF @ 25 V
-
600W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.