Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesNexperia USA Inc.
Series
-HEXFET®HEXFET®, StrongIRFET™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
30 V60 V135 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)300mA (Tc)1.2A (Ta)22A (Ta), 70A (Tc)129A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V8.4mOhm @ 77A, 10V480mOhm @ 1.2A, 10V4.5Ohm @ 100mA, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.2V @ 250µA2.5V @ 250µA2.5V @ 25µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V0.67 nC @ 4.5 V49 nC @ 10 V270 nC @ 10 V
Vgs (Max)
±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V50 pF @ 10 V64 pF @ 25 V2010 pF @ 15 V9700 pF @ 50 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)830mW (Ta)1.25W (Ta)2.5W (Ta), 50W (Tc)441W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23PG-TO263-3-2TO-236ABTO-252 (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
33,356
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.21841
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
637,200
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39013
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2060TRPBF
MOSFET N-CH 60V 1.2A SOT23
Infineon Technologies
43,884
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.2A (Ta)
4.5V, 10V
480mOhm @ 1.2A, 10V
2.5V @ 25µA
0.67 nC @ 4.5 V
±16V
64 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO-252, (D-Pak)
AOD508
MOSFET N-CH 30V 22A/70A TO252
Alpha & Omega Semiconductor Inc.
23,914
In Stock
1 : ¥7.06000
Cut Tape (CT)
2,500 : ¥2.69406
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
3mOhm @ 20A, 10V
2.2V @ 250µA
49 nC @ 10 V
±20V
2010 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF135S203
MOSFET N-CH 135V 129A TO263-3
Infineon Technologies
294
In Stock
1 : ¥26.60000
Cut Tape (CT)
800 : ¥16.07186
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
135 V
129A (Tc)
10V
8.4mOhm @ 77A, 10V
4V @ 250µA
270 nC @ 10 V
±20V
9700 pF @ 50 V
-
441W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.