Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RUM002N05T2L MOSFET N-CH 50V 200MA VMT3 Rohm Semiconductor	758,908 In Stock	1 : ¥2.30000 Cut Tape (CT) 8,000 : ¥0.39897 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	1.2V, 4.5V	2.2Ohm @ 200mA, 4.5V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	VMT3	SOT-723
RS1E220ATTB1 MOSFET P-CH 30V 22A/76A 8HSOP Rohm Semiconductor	8,281 In Stock	1 : ¥21.67000 Cut Tape (CT) 2,500 : ¥9.77047 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta), 76A (Tc)	4.5V, 10V	4.1mOhm @ 22A, 10V	2.5V @ 2mA	130 nC @ 10 V	±20V	5850 pF @ 15 V	-	3W (Ta)	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RQ5L020SNTL MOSFET N-CH 60V 2A TSMT3 Rohm Semiconductor	5,210 In Stock	1 : ¥4.76000 Cut Tape (CT) 3,000 : ¥1.61434 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	170mOhm @ 2A, 10V	2.5V @ 1mA	2.7 nC @ 5 V	±20V	180 pF @ 10 V	-	700mW (Ta)	150°C (TJ)	Surface Mount	TSMT3	SC-96
SI1032X-T1-GE3 MOSFET N-CH 20V 200MA SC89-3 Vishay Siliconix	4,514 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥1.18631 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.5V, 4.5V	5Ohm @ 200mA, 4.5V	1.2V @ 250µA	0.75 nC @ 4.5 V	±6V	-	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.