Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)30A (Tc)
Rds On (Max) @ Id, Vgs
13.6mOhm @ 30A, 10V60mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10µA2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 5 V14 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
657 pF @ 25 V980 pF @ 25 V
Power Dissipation (Max)
2W (Ta)31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3-11PG-TSOP6-6
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SC-74, SOT-457
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
Infineon Technologies
10,924
In Stock
1 : ¥5.17000
Cut Tape (CT)
3,000 : ¥1.73064
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4.5A (Ta)
4.5V, 10V
60mOhm @ 4.5A, 10V
2.3V @ 15µA
5.6 nC @ 5 V
±20V
657 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSOP6-6
SOT-23-6 Thin, TSOT-23-6
TO252-3
IPD30N03S4L14ATMA1
MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
18,935
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.86423
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
13.6mOhm @ 30A, 10V
2.2V @ 10µA
14 nC @ 10 V
±16V
980 pF @ 25 V
-
31W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.