Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET® Gen IIIU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)10A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 9A, 10V42.7mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.8 nC @ 4.5 V42 nC @ 10 V
Vgs (Max)
+6V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 10 V1500 pF @ 15 V
Power Dissipation (Max)
1W (Ta)3.2W (Ta), 24W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
PowerPAK® 1212-8UF6
Package / Case
6-SMD, Flat LeadsPowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3,895
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.75550
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
-
1W (Ta)
150°C
Surface Mount
UF6
6-SMD, Flat Leads
PowerPAK 1212-8
SISA35DN-T1-GE3
MOSFET P-CH 30V 10A/16A PPAK
Vishay Siliconix
13,154
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.11082
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta), 16A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
3.2W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.