Single FETs, MOSFETs

Results: 9
Manufacturer
EPConsemiTransphorm
Series
-eGaN®TP65H070L
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V170 V200 V650 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)6A (Ta)14A (Ta)24A (Ta)25A (Tc)29A (Ta)32A (Ta)48A (Ta)102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 32A, 5V6mOhm @ 16A, 5V8mOhm @ 20A, 5V9mOhm @ 10A, 5V22mOhm @ 14A, 5V30mOhm @ 6A, 5V85mOhm @ 16A, 10V1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 1.2mA2.5V @ 2mA2.5V @ 3mA2.5V @ 4mA2.5V @ 6mA2.5V @ 7mA2.5V @ 8mA4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V2.2 nC @ 5 V5.9 nC @ 5 V7.4 nC @ 5 V9.3 nC @ 10 V11 nC @ 5 V17.7 nC @ 5 V24 nC @ 5 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V220 pF @ 50 V600 pF @ 100 V600 pF @ 400 V836 pF @ 85 V851 pF @ 50 V1140 pF @ 100 V1790 pF @ 100 V3195 pF @ 100 V
Power Dissipation (Max)
280mW (Tj)96W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
3-PQFN (8x8)7-QFN (3x5)DieSC-70-3 (SOT323)
Package / Case
3-PowerDFN7-PowerWQFNDieSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-3
2N7002W
MOSFET SOT323 N 60V 13.5OHM
onsemi
4,554
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.63694
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
4.5V, 10V
1.6Ohm @ 50mA, 5V
2V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
280mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
eGaN Series
EPC2007C
GANFET N-CH 100V 6A DIE OUTLINE
EPC
22,559
In Stock
1 : ¥18.55000
Cut Tape (CT)
2,500 : ¥8.38099
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
6A (Ta)
5V
30mOhm @ 6A, 5V
2.5V @ 1.2mA
2.2 nC @ 5 V
+6V, -4V
220 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC22xx
EPC2207
TRANS GAN 200V DIE .022OHM
EPC
29,271
In Stock
1 : ¥19.54000
Cut Tape (CT)
2,500 : ¥8.82209
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
22mOhm @ 14A, 5V
2.5V @ 2mA
5.9 nC @ 5 V
+6V, -4V
600 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
3,345
In Stock
1 : ¥19.78000
Cut Tape (CT)
2,500 : ¥8.93236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2059
EPC2059
TRANS GAN 170V DIE .009OHM
EPC
27,961
In Stock
1 : ¥27.26000
Cut Tape (CT)
2,500 : ¥13.26299
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
170 V
24A (Ta)
5V
9mOhm @ 10A, 5V
2.5V @ 3mA
7.4 nC @ 5 V
+6V, -4V
836 pF @ 85 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC22xx
EPC2215
GAN TRANS 200V 8MOHM BUMPED DIE
EPC
32,498
In Stock
1 : ¥52.29000
Cut Tape (CT)
2,500 : ¥27.79498
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
32A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 6mA
17.7 nC @ 5 V
+6V, -4V
1790 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2304ENGRT
EPC2304ENGRT
TRANS GAN 200V .005OHM 3X5PQFN
EPC
36,194
In Stock
1 : ¥69.04000
Cut Tape (CT)
3,000 : ¥36.71034
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
102A (Ta)
5V
3.1mOhm @ 32A, 5V
2.5V @ 8mA
24 nC @ 5 V
+6V, -4V
3195 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
PQFN_8x8
TP65H070LSG-TR
GANFET N-CH 650V 25A PQFN88
Transphorm
12,335
In Stock
1 : ¥72.82000
Cut Tape (CT)
500 : ¥61.05702
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
25A (Tc)
10V
85mOhm @ 16A, 10V
4.8V @ 700µA
9.3 nC @ 10 V
±20V
600 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
3-PQFN (8x8)
3-PowerDFN
eGaN Series
EPC2034C
GANFET N-CH 200V 48A DIE
EPC
24,312
In Stock
1 : ¥75.94000
Cut Tape (CT)
500 : ¥47.88316
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
11 nC @ 5 V
+6V, -4V
1140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.