Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.Rohm Semiconductor
Series
-HEXFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V50 V55 V650 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)2.4A (Ta)3.8A (Ta)21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
40mOhm @ 3.8A, 10V80mOhm @ 4.2A, 10V156mOhm @ 6.7A, 18V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA3V @ 250µA5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V12.2 nC @ 10 V38 nC @ 18 V48 nC @ 10 V
Vgs (Max)
±16V±20V+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V460 pF @ 500 V587 pF @ 20 V870 pF @ 25 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)720mW (Ta)1W (Ta)100W
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Supplier Device Package
SOT-223SOT-23-3TO-236ABTO-263-7
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
673,498
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31335
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT223-3L
IRLL2705TRPBF
MOSFET N-CH 55V 3.8A SOT223
Infineon Technologies
5,171
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.94377
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
3.8A (Ta)
4V, 10V
40mOhm @ 3.8A, 10V
2V @ 250µA
48 nC @ 10 V
±16V
870 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
26,598
In Stock
960,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79551
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SCT3series
SCT3120AW7TL
SICFET N-CH 650V 21A TO263-7
Rohm Semiconductor
802
In Stock
1 : ¥87.10000
Cut Tape (CT)
1,000 : ¥55.14908
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
-
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
100W
175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.