Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiRohm Semiconductor
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
9.8mOhm @ 30A, 10V10.6mOhm @ 60A, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA3.8V @ 36µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V1560 pF @ 50 V2100 pF @ 50 V
Power Dissipation (Max)
300mW (Ta)2.5W (Ta), 69W (Tc)3W (Ta), 73W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSOPPG-TDSON-8-7SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
MMBF170
MOSFET N-CH 60V 500MA SOT23
onsemi
26,839
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.53143
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC098N10NS5ATMA1
MOSFET N-CH 100V 60A TDSON
Infineon Technologies
13,384
In Stock
1 : ¥12.97000
Cut Tape (CT)
5,000 : ¥5.63907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
60A (Tc)
6V, 10V
9.8mOhm @ 30A, 10V
3.8V @ 36µA
28 nC @ 10 V
±20V
2100 pF @ 50 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
MFG_RS6P060BHTB1
RS6P060BHTB1
NCH 100V 60A, HSOP8, POWER MOSFE
Rohm Semiconductor
2,235
In Stock
1 : ¥19.05000
Cut Tape (CT)
2,500 : ¥8.60211
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
60A (Tc)
6V, 10V
10.6mOhm @ 60A, 10V
4V @ 1mA
25 nC @ 10 V
±20V
1560 pF @ 50 V
-
3W (Ta), 73W (Tc)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.